Tungsten as a Chemically-Stable Electrode Material on Ga-Containing Piezoelectric Substrates Langasite and Catangasite for High-Temperature SAW Devices

نویسندگان

  • Gayatri K. Rane
  • Marietta Seifert
  • Siegfried Menzel
  • Thomas Gemming
  • Jürgen Eckert
چکیده

Thin films of tungsten on piezoelectric substrates La₃Ga₅SiO14 (LGS) and Ca₃TaGa₃Si₂O14 (CTGS) have been investigated as a potential new electrode material for interdigital transducers for surface acoustic wave-based sensor devices operating at high temperatures up to 800 °C under vacuum conditions. Although LGS is considered to be suitable for high-temperature applications, it undergoes chemical and structural transformation upon vacuum annealing due to diffusion of gallium and oxygen. This can alter the device properties depending on the electrode nature, the annealing temperature, and the duration of the application. Our studies present evidence for the chemical stability of W on these substrates against the diffusion of Ga/O from the substrate into the film, even upon annealing up to 800 °C under vacuum conditions using Auger electron spectroscopy and energy-dispersive X-ray spectroscopy, along with local studies using transmission electron microscopy. Additionally, the use of CTGS as a more stable substrate for such applications is indicated.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Surface Effects and Challenges for Application of Piezoelectric Langasite Substrates in Surface Acoustic Wave Devices Caused by High Temperature Annealing under High Vacuum

Substrate materials that are high-temperature stable are essential for sensor devices which are applied at high temperatures. Although langasite is suggested as such a material, severe O and Ga diffusion into an O-affine deposited film was observed during annealing at high temperatures under vacuum conditions, leading to a damage of the metallization as well as a change of the properties of the...

متن کامل

Novel AlN/Pt/ZnO Electrode for High Temperature SAW Sensors

In order to develop a film electrode for the surface acoustic wave (SAW) devices working in high temperature, harsh environments, novel AlN/Pt/ZnO multilayers were prepared using pulsed laser deposition (PLD) systems on langasite (LGS) substrates. The AlN film was used as a protective layer and the ZnO buffer layer was introduced to improve the crystal quality of Pt films. The results show that...

متن کامل

High temperature LGS SAW gas sensor

Novel surface acoustic wave (SAW) devices using the recent langasite (LGS) family of crystals have been designed, fabricated, and tested for high temperature (up to 750 ◦C) gas sensor applications. The devices were fabricated using platinum (Pt) and palladium (Pd) thin film technology as electrodes and sensing films to withstand temperatures in excess of 1000 ◦C. Combinations of platinum and pl...

متن کامل

Improvement of High-Temperature Stability of Al2O3/Pt/ZnO/Al2O3 Film Electrode for SAW Devices by Using Al2O3 Barrier Layer

In order to develop film electrodes for the surface acoustic wave (SAW) devices operating in harsh high-temperature environments, novel Al₂O₃/Pt/ZnO/Al₂O₃ multilayered film electrodes were prepared by laser molecular beam epitaxy (LMBE) at 150 °C. The first Al₂O₃ layer was used as a barrier layer to prevent the diffusion of Ga, La, and Si atoms from the La₃Ga₅SiO14 (LGS) substrate to the film e...

متن کامل

Effects of AlN Coating Layer on High Temperature Characteristics of Langasite SAW Sensors

High temperature characteristics of langasite surface acoustic wave (SAW) devices coated with an AlN thin film have been investigated in this work. The AlN films were deposited on the prepared SAW devices by mid-frequency magnetron sputtering. The SAW devices coated with AlN films were measured from room temperature to 600 °C. The results show that the SAW devices can work up to 600 °C. The AlN...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره 9  شماره 

صفحات  -

تاریخ انتشار 2016